Toshiba 3rd-Gen SiC MOSFETs Directed at Industrial Applications
Toshiba Electronics & Storage Corp. has launched new power devices, the \”TWxxNxxxC series,\” its Third generation silicon carbide(SiC) MOSFETs, that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have begun shipping.
The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%, allowing the drain-source on-resistancegate-drain charge (RDS(ON)Qgd), an important index that is representative of the relationship between conduction loss and switching loss, to be lowered by about 80%. This cuts the switching loss by about 20%, and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.
Toshiba will continue to expand its lineup of power devices and also to enhance its production facilities, and aims to understand a carbon-free economy by giving high-performance power devices that are simple to use.